Non-Linear MESFET Modelling

A new technique for non-linear modelling of MESFETs has been developed based on the extraction of both linear and non-linear model parameters in one optimization step. The technique eliminates various modelling inconsistency problems and can be used for MESFETs with dispersi ve model parameters. The only required device measurements are small-signal S-parameters and DC or RF characteristics. Also an improved MESFET model suitable for CAD programs is proposed. Both the new parameter extraction technique and the model are illustrated on the example of a half-micron monolithic MESFET with frequency dispersion.