DocumentCode
1996692
Title
Accurate Spice Modelling of GaAs-MESFETS for use in GaAs-Ic Design
Author
Boeck, G. ; von Basse, P.-W. ; Muller, J.-E. ; Kellner, W.
Author_Institution
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 Munich 83, FRG
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
611
Lastpage
615
Abstract
An improved GaAs-MESFET, curve-fitting model has been developed and implemented into the source code of SPICE 2G.6. The advantages of our model compared to the well known Curtice model are shown. We describe our sequential procedure to find the fit functions and to extract the model parameters. The model presented here is suitable for simulation of high speed analog and digital GaAs integrated circuits.
Keywords
Circuit simulation; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; Ice; Integrated circuit modeling; MESFETs; Roentgenium; SPICE; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333672
Filename
4132408
Link To Document