Automatic Full Noise Characterization of Microwave GaAs FETs

A new electronically controlled input tuner is proposed for microwave device noise parameter characterization. The design and performance of this tuner are discussed. A large set of reflection coefficient equally spaced in Smith chart is produced using only frequency and power attenuation changes. High reproducibility is performed by avoiding mechanical shift. A broadband automatic noise parameters test set is realized using the proposed tuner, and applications to the full noise characterization of GaAs microwave ion-implanted MESFET are given.