Damage calibration concept and novel B cluster reaction model for B transient enhanced diffusion over thermal process range from 600/spl deg/C (839 h) to 1100/spl deg/C (5 s) with various ion implantation doses and energies

We propose to use a fixed damage factor combined with an effective dose to generate an initial interstitial silicon concentration profile at a given B ion implantation conditions and demonstrate that this methodology can readily explain transient enhanced diffusion (TED) in almost all relevant cases of practical VLSI processing. We also developed a B cluster reaction model which enables us to tune time evolution of active B profiles in a flexible way.