Analytical Construction of Nonlinear Lookup Table Model for Advanced Microwave Transistors

This paper is aimed at analyzing in detail the construction of a nonlinear lookup table based model for advanced microwave transistors. The accuracy of this modelling approach is tested on FinFETs, which are multiple gate MOSFET structures promising for the further downscaling of CMOS technology into the nanometer regime. An accurate multi-bias small signal equivalent circuit is used as keystone for building a nonlinear model based on lookup tables. A very good agreement between simulated and measured nonlinear behaviour of interdigitated FinFETs is achieved at all investigated bias conditions, fundamental frequencies, input power levels, and device geometries. That confirms the accuracy and the robustness of the nonlinear lookup table modelling approach.