Study of CNTFET based basic current mirror in comparison with NMOS technologies

Author

Gupta, Rajesh ; Rana, Ashwani K.

Author_Institution

Electron. & Commun. Eng. Dept., Nat. Inst. of Technol., Hamirpur, India

fYear

2013

fDate

19-21 Dec. 2013

Firstpage

1

Lastpage

6

Abstract

The present paper explores and analyses the performance of Carbon Nano Tube Field Effect Transistor (CNTFET) technology in analog domain through its application as a basic current mirror. 32nm channel length-single walled-one tube CNTFET technology has been assessed and compared with 45nm, 32nm and 22nm NMOS technologies through HSPICE simulations of current mirror circuitry. Different methods of comparison like current error, input-output resistances, AC small signal and transient analysis have been employed which highlight the benefits of CNTFET over NMOS technology and its potential to be used for analog VLSI.

Keywords

MOSFET; SPICE; VLSI; carbon nanotube field effect transistors; current mirrors; AC small signal transient analysis; C; CNTFET; HSPICE simulations; NMOS technology; analog VLSI; carbon nanotube field effect transistor; current mirror; size 22 nm; size 32 nm; size 45 nm; CNTFETs; Communication systems; Electron tubes; Logic gates; MOS devices; Mirrors; Resistance; Analog; CNTFET; Current Mirror; MOSFET; Nanotechnology; Simulation; VLSI;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Computing and Communication Systems (ICACCS), 2013 International Conference on

Conference_Location

Coimbatore

Type

conf

DOI

10.1109/ICACCS.2013.6938695

Filename

6938695