Title :
Study of CNTFET based basic current mirror in comparison with NMOS technologies
Author :
Gupta, Rajesh ; Rana, Ashwani K.
Author_Institution :
Electron. & Commun. Eng. Dept., Nat. Inst. of Technol., Hamirpur, India
Abstract :
The present paper explores and analyses the performance of Carbon Nano Tube Field Effect Transistor (CNTFET) technology in analog domain through its application as a basic current mirror. 32nm channel length-single walled-one tube CNTFET technology has been assessed and compared with 45nm, 32nm and 22nm NMOS technologies through HSPICE simulations of current mirror circuitry. Different methods of comparison like current error, input-output resistances, AC small signal and transient analysis have been employed which highlight the benefits of CNTFET over NMOS technology and its potential to be used for analog VLSI.
Keywords :
MOSFET; SPICE; VLSI; carbon nanotube field effect transistors; current mirrors; AC small signal transient analysis; C; CNTFET; HSPICE simulations; NMOS technology; analog VLSI; carbon nanotube field effect transistor; current mirror; size 22 nm; size 32 nm; size 45 nm; CNTFETs; Communication systems; Electron tubes; Logic gates; MOS devices; Mirrors; Resistance; Analog; CNTFET; Current Mirror; MOSFET; Nanotechnology; Simulation; VLSI;
Conference_Titel :
Advanced Computing and Communication Systems (ICACCS), 2013 International Conference on
Conference_Location :
Coimbatore
DOI :
10.1109/ICACCS.2013.6938695
