Title :
GaInNAs and quantum dot lasers - GaAs-based lasers for telecommunications
Author_Institution :
Tech. Physik, Wurzburg Univ., Germany
Abstract :
The work reviews on the status of GaAs-based lasers for the 1.3 to 1.5 /spl mu/m range with GaInNAs active layers as well as based on In(Ga)As quantum dots (QD). Routes for further improvements like the use of GaInNAsSb as proposed by J. Harris et al., Stanford, will be discussed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical communication equipment; quantum dot lasers; wide band gap semiconductors; 1.3 mum; 1.5 mum; GaAs-based lasers; GaInNAs laser; quantum dot laser; telecommunications;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
