DocumentCode :
1997405
Title :
Low noise, high count rate charge amplifier with detector embedded front-end transistor and continuous reset
Author :
Guazzoni, C. ; Sampietro, Marco ; Fazzi, A. ; Lechner, P.
Author_Institution :
Dipt. di Elettronica, Politecnico di Milano, Italy
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
356
Abstract :
Detector front-end circuits for spectroscopy applications have to provide a precise and stable amplification of the signal pulse and a reset path for the accumulated signal and leakage current. In the case in which very high energy resolutions are required in conjunction with high count rate capabilities, the required stability in the amplification is only given by a charge amplifier and its front-end should be integrated on the detector chip in order to minimise parasitic capacitances. A two-chip system has been designed and produced. The front-end nJFET, the feedback capacitance and the reset mechanism are integrated on the detector chip. The other components of the charge amplifier are designed on a second chip produced in BiCMOS technology to be coupled to the detector chip
Keywords :
BiCMOS analogue integrated circuits; JFET integrated circuits; X-ray detection; nuclear electronics; silicon radiation detectors; BiCMOS technology; Si; continuous reset; detector chip; detector embedded front-end transistor; detector front-end circuits; feedback capacitance; front-end nJFET; high count rate capabilities; leakage current; low noise high count rate charge amplifier; parasitic capacitances; spectroscopy applications; Circuit noise; Detectors; Energy resolution; Leak detection; Leakage current; Low-noise amplifiers; Parasitic capacitance; Pulse amplifiers; Pulse circuits; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location :
Seattle, WA
ISSN :
1082-3654
Print_ISBN :
0-7803-5696-9
Type :
conf
DOI :
10.1109/NSSMIC.1999.842508
Filename :
842508
Link To Document :
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