Title :
A simple polysilicon TFT technology for display systems on glass
Author :
Kumar K.P., A. ; Sin, K.O.
Author_Institution :
Centre for Display Res., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
In this paper, a simple low temperature (600/spl deg/C) polysilicon technology called the Elevated Channel TFT (ECTFT) technology is reported. This technology provides all the necessary components needed for the ultimate goal of building large area microelectronic systems on glass. These components include high current digital devices, kink-free analog devices, large storage capacitance with reduced area, high current driver devices and efficient memory devices. With this technology, small or medium size display systems on glass can be realized.
Keywords :
annealing; diffusion; display devices; elemental semiconductors; ion implantation; semiconductor technology5802268; silicon; solid solubility; thin film transistors; 600 C; Si; display system; glass substrate; high current digital device; high current driver device; kink-free analog device; large area microelectronic system; low temperature Elevated Channel TFT technology; memory device; polysilicon TFT; storage capacitance; Capacitance; Displays; Driver circuits; Glass; Metallization; Microelectronics; Silicon compounds; Temperature; Thickness control; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650436
