A simple polysilicon TFT technology for display systems on glass

Author

Kumar K.P., A. ; Sin, K.O.

Author_Institution

Centre for Display Res., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

515

Lastpage

518

Abstract

In this paper, a simple low temperature (600/spl deg/C) polysilicon technology called the Elevated Channel TFT (ECTFT) technology is reported. This technology provides all the necessary components needed for the ultimate goal of building large area microelectronic systems on glass. These components include high current digital devices, kink-free analog devices, large storage capacitance with reduced area, high current driver devices and efficient memory devices. With this technology, small or medium size display systems on glass can be realized.

Keywords

annealing; diffusion; display devices; elemental semiconductors; ion implantation; semiconductor technology5802268; silicon; solid solubility; thin film transistors; 600 C; Si; display system; glass substrate; high current digital device; high current driver device; kink-free analog device; large area microelectronic system; low temperature Elevated Channel TFT technology; memory device; polysilicon TFT; storage capacitance; Capacitance; Displays; Driver circuits; Glass; Metallization; Microelectronics; Silicon compounds; Temperature; Thickness control; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650436

Filename

650436