DocumentCode :
1997445
Title :
Temperature Analysis and Thermal Resistance of a Matrix of Impatt Diodes
Author :
Strum, A. ; Bar-lev, A.
fYear :
1987
fDate :
7-11 Sept. 1987
Firstpage :
809
Lastpage :
813
Abstract :
A composite Impatt device consisting of a matrix of Impatt diodes, in a multimesa structure, ture, with a common n + electrode region and a common heatsink, represents a complex non-linear thermal problem since each diode heat contribution depends indirectly on its junction temperature. Numerical analysis is used to obtain a temperature map of such a composite device and its thermal resistance as functions of the ratio of the distance between individual diodes in the array d and their diameter a. It is shown, for instance, that a 60% reduction in thermal resistance can be achieved for d/a = 5, compared to a single diode of the same total area. The same analysis can be used for any matrix of temperature dependent heat sources, in close proximity on a common heatsink.
Keywords :
Capacitance; Diodes; Electrodes; Etching; Power supplies; Resistance heating; Silicon; Substrates; Temperature dependence; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1987. 17th European
Conference_Location :
Rome, Italy
Type :
conf
DOI :
10.1109/EUMA.1987.333733
Filename :
4132439
Link To Document :
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