• DocumentCode
    1997445
  • Title

    Temperature Analysis and Thermal Resistance of a Matrix of Impatt Diodes

  • Author

    Strum, A. ; Bar-lev, A.

  • fYear
    1987
  • fDate
    7-11 Sept. 1987
  • Firstpage
    809
  • Lastpage
    813
  • Abstract
    A composite Impatt device consisting of a matrix of Impatt diodes, in a multimesa structure, ture, with a common n + electrode region and a common heatsink, represents a complex non-linear thermal problem since each diode heat contribution depends indirectly on its junction temperature. Numerical analysis is used to obtain a temperature map of such a composite device and its thermal resistance as functions of the ratio of the distance between individual diodes in the array d and their diameter a. It is shown, for instance, that a 60% reduction in thermal resistance can be achieved for d/a = 5, compared to a single diode of the same total area. The same analysis can be used for any matrix of temperature dependent heat sources, in close proximity on a common heatsink.
  • Keywords
    Capacitance; Diodes; Electrodes; Etching; Power supplies; Resistance heating; Silicon; Substrates; Temperature dependence; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1987. 17th European
  • Conference_Location
    Rome, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1987.333733
  • Filename
    4132439