0.8 to 18.0 GHz Hybrid Distributed Amplifiers using 0.25 Ã\x97 200 pm MESFET and HEMT

0.8 to 18.0 GHz hybrid distributed amplifiers have been realized using 2 FETs with 0.25 × 200 micron gate. One amplifier, using two 0.25 × 200 micron MESFETs, exhibits 5.0 ± 0.3 dB of gain, less than 6.2 dB of noise figure. The other amplifier, using two 0.25 × 200 micron HEMTs, exhibits 7.0 ± 0.5 dB of gain, less than 5.4 dB of noise figure. These are the first distributed amplifiers ever reported to cover such a wide bandwidth and exhibit high RF performance using only 2 FETs.