A novel high efficiency gate drive circuit for normally off type GaN-FET

A novel drive circuit suitable for next generation semiconductor, GaN-FET (Gallium Nitride Field Effect Transistor), have been proposed and discussed in this paper. Drive loss is also analyzed on respective methods. Furthermore, the problem which is loss increase one of body diode in GaN-FET has been pointed out, and a novel active discharged type gate drive circuit suitable for GaN-FET is proposed. Its operating principles and low loss operation are discussed and evaluated effectiveness from the experimental point of view.