DocumentCode
1997862
Title
A high stability, low supply voltage and low standby power six-transistor CMOS SRAM
Author
Kobayashi, Nobuaki ; Ito, Ryusuke ; Enomoto, Tadayoshi
Author_Institution
Chuo Univ., Tokyo, Japan
fYear
2015
fDate
19-22 Jan. 2015
Firstpage
10
Lastpage
11
Abstract
The SVL circuit not only improve “read” and “write” characteristics of SRAMs, but also reduce the stand-by powers of the SRAMs. Therefore, SRAMs incorporating SVL circuits are very useful for use in low supply voltage, battery-driven portable systems.
Keywords
SRAM chips; adaptive control; self-adjusting systems; CMOS SRAM; SVL circuit; self-controllable voltage level; standby power six-transistor; static random access memories; Arrays; Circuit stability; Leakage currents; MOSFET; Random access memory; Threshold voltage; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (ASP-DAC), 2015 20th Asia and South Pacific
Conference_Location
Chiba
Print_ISBN
978-1-4799-7790-1
Type
conf
DOI
10.1109/ASPDAC.2015.7058921
Filename
7058921
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