Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET

Author

Fazzi, A. ; Pignatel, G.U. ; Betta, G. F Dalla ; Boscardin, M. ; Varoli, V. ; Verzellesi, G.

Author_Institution

Politecnico di Milano, Italy

Volume

1

fYear

1999

fDate

1999

Firstpage

533

Abstract

“On-chip” electronics fabricated on 6 kΩ cm high resistivity wafer is fully characterized and spectroscopic measurements carried out. A new charge sensitive circuit is introduced to amplify the hole signals with on-chip n-channel JFETs and without any resetting devices. The JFET gate-source junction is forward biased and the drain current is stabilized by a low frequency feedback on the JFET p+ well contact (used as a buried gate for the JFET). Preliminary setups with PIN diodes and tetrode n-JFETs are successfully tested. With about 5 pF total input capacitance, resolution of 86 rms electrons at 223 K with 10 μs shaping time is obtained. With about 2.7 pF, 60 rms electrons at 298 K with 10 μs are obtained

Keywords

JFET integrated circuits; nuclear electronics; p-i-n diodes; preamplifiers; silicon radiation detectors; JFET gate-source junction; Si; charge preamplifier; charge sensitive circuit; drain current; high resistivity wafer; hole collecting PIN diode; integrated tetrode N-JFET; low frequency feedback; spectroscopic measurements; Charge measurement; Conductivity; Current measurement; Electrons; Feedback; Frequency; Integrated circuit measurements; JFETs; Preamplifiers; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE

Conference_Location

Seattle, WA

ISSN

1082-3654

Print_ISBN

0-7803-5696-9

Type

conf

DOI

10.1109/NSSMIC.1999.842541

Filename

842541