DocumentCode
1998284
Title
Minimizing the bottom reflection in Ultrasonic CMUT Transducer backing using low profile structuring
Author
Chapagain, Kamal Raj ; Rnnekleiv, Arne
Author_Institution
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
fYear
2009
fDate
20-23 Sept. 2009
Firstpage
430
Lastpage
433
Abstract
Capacitive Micro-machined Ultrasonic Transducer (CMUT) transducers need an acoustic backing to ensure that any acoustic signal which propagates from the transducer into the substrate is absorbed in the backing. The backing should be made such that it does not give a false echo in the signal received by or transmitted from the transducer. Ideally, this backing material should provide high attenuation and it should match the acoustic impedance of the CMUT supporting structure (usually silicon). To avoid the echoes described above, a thick backing layer is required. But in many cases, there is little space available under the transducer so that it is difficult to accommodate a sufficiently thick layer of material with realistic propagation losses, to ensure that no signal is reflected back to the transducer. In this paper, we discuss irregular structures at the bottom surface that are used to scatter the waves. The proposed structure scatters the waves into waves with significantly changed propagation directions, giving long propagation paths back to the transducer. The structure is analyzed using FEM simulations for a simple 2D case. Different ways of implementing the structure is also discussed.
Keywords
capacitive sensors; finite element analysis; silicon; ultrasonic propagation; ultrasonic reflection; ultrasonic transducers; CMUT supporting structure; FEM simulation; acoustic backing; bottom reflection minimization; capacitive micromachined ultrasonic transducer; finite element method; low profile structuring; thick backing layer; ultrasonic CMUT transducer; Acoustic materials; Acoustic propagation; Acoustic reflection; Acoustic scattering; Acoustic transducers; Attenuation; Impedance; Propagation losses; Silicon; Ultrasonic transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location
Rome
ISSN
1948-5719
Print_ISBN
978-1-4244-4389-5
Electronic_ISBN
1948-5719
Type
conf
DOI
10.1109/ULTSYM.2009.5441721
Filename
5441721
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