Title :
A modified MODPEX model for MOSFET and parameter optimization using excel-based genetic algorithm
Author :
Zhiyang Chen ; Lindeman, R.
Abstract :
MODPEX is widely used in industry and universities to produce Pspice model for power semiconductor devices, including MOSFETs. However, the model generated by MODPEX for MOSFETs does not include channel charge at strong inversion condition. This paper presents a modified MODPEX model for MOSFETs, which includes channel charge at strong inversion condition. A process based on genetic algorithm (GA) implemented in Microsoft Office Excel is developed to optimize parameters of the modified MODPEX model. Static and dynamic validation proves that the modified MODPEX model improves simulation accuracy in both switching loss and driver loss.
Keywords :
genetic algorithms; losses; power MOSFET; power engineering computing; MODPEX model; MOSFET; Microsoft Office Excel; Pspice model; channel charge; driver loss; dynamic validation; genetic algorithm; inversion condition; parameter optimization; power semiconductor device; static validation; switching loss; Capacitance; Equations; Genetic algorithms; Logic gates; MOSFET circuits; Mathematical model; Semiconductor device modeling;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342392
