• DocumentCode
    1998538
  • Title

    Femtosecond X-ray diffraction of structural changes in a semiconductor superlattice

  • Author

    Bargheer, M. ; Zhavoronkov, N. ; Gritsai, Y. ; Woo, D.H. ; Kim, D.S. ; Woerner, M. ; Elsaesser, T.

  • Author_Institution
    Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany
  • Volume
    1
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    Femtosecond excitation of spatially modulated electron hole plasmas leads to an ultrafast structural response within the unit cell of GaAs/AlGaAs superlattices. The transient rocking curve reflects the expansion of wells and compression of barriers.
  • Keywords
    III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; high-speed optical techniques; semiconductor superlattices; GaAs-AlGaAs; GaAs/AlGaAs superlattices; femtosecond X-ray diffraction; spatially modulated electron hole plasmas; transient rocking curve;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1361868