DocumentCode
1998538
Title
Femtosecond X-ray diffraction of structural changes in a semiconductor superlattice
Author
Bargheer, M. ; Zhavoronkov, N. ; Gritsai, Y. ; Woo, D.H. ; Kim, D.S. ; Woerner, M. ; Elsaesser, T.
Author_Institution
Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Femtosecond excitation of spatially modulated electron hole plasmas leads to an ultrafast structural response within the unit cell of GaAs/AlGaAs superlattices. The transient rocking curve reflects the expansion of wells and compression of barriers.
Keywords
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; high-speed optical techniques; semiconductor superlattices; GaAs-AlGaAs; GaAs/AlGaAs superlattices; femtosecond X-ray diffraction; spatially modulated electron hole plasmas; transient rocking curve;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361868
Link To Document