DocumentCode
1998567
Title
Heterostructure Microwave Transistors for Ultra-High-Speed Electronics
Author
Liechti, Charles A.
Author_Institution
Rockwell International, Science Center, Thousand Oaks, CA, USA
fYear
1988
fDate
12-15 Sept. 1988
Firstpage
92
Lastpage
100
Abstract
Ultra-high-speed operation will be required primarily in fiber-optic communication links, millimeter-wave military systems and advanced test instrumentation. To meet these needs, a new generation of heterostructure microwave transistors, fabricated on silicon, GaAs and InP, is emerging. This overview paper discusses the key characteristics, applications, and the future outlook for these transistors and their monolithic circuit implementation.
Keywords
Circuit testing; Microwave communication; Microwave transistors; Military communication; Millimeter wave circuits; Millimeter wave communication; Millimeter wave transistors; Optical fiber communication; Optical fiber testing; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1988. 18th European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1988.333801
Filename
4132489
Link To Document