Title :
Heterostructure Microwave Transistors for Ultra-High-Speed Electronics
Author :
Liechti, Charles A.
Author_Institution :
Rockwell International, Science Center, Thousand Oaks, CA, USA
Abstract :
Ultra-high-speed operation will be required primarily in fiber-optic communication links, millimeter-wave military systems and advanced test instrumentation. To meet these needs, a new generation of heterostructure microwave transistors, fabricated on silicon, GaAs and InP, is emerging. This overview paper discusses the key characteristics, applications, and the future outlook for these transistors and their monolithic circuit implementation.
Keywords :
Circuit testing; Microwave communication; Microwave transistors; Military communication; Millimeter wave circuits; Millimeter wave communication; Millimeter wave transistors; Optical fiber communication; Optical fiber testing; System testing;
Conference_Titel :
Microwave Conference, 1988. 18th European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1988.333801
