DocumentCode
1998619
Title
Dual-GCT design criteria and voltage scaling
Author
Van Brunt, Edward ; Huang, Alex Q. ; Butschen, Thomas ; De Doncker, Rik W.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2012
fDate
15-20 Sept. 2012
Firstpage
2596
Lastpage
2603
Abstract
Global optimization has been performed to derive optimal Dual-GCT structures for 3.3 kV, 5 kV, and 6.5 kV class devices by using numerical simulation results. A treatment of all relevant physical concepts for both standard- and Dual-GCTs are taken into account in the optimization process, providing an insight into the effect of design parameters such as minority carrier lifetime, buffer region design, and device geometry. The results indicate that within the scope of a Dual Active Bridge power converter application, the Dual-GCT can provide more than 54 % improvement in the current density when compared to equivalent conventional devices for each of the device ratings examined, which verifies the scalability of the Dual-GCT concept.
Keywords
current density; numerical analysis; optimisation; power aware computing; power convertors; current density; design parameters; device ratings; dual active bridge power converter application; dual-GCT design criteria; equivalent conventional devices; global optimization process; optimal dual-GCT structures; physical concepts; voltage 3.3 kV; voltage 5 kV; voltage 6.5 kV; voltage scaling; Charge carrier lifetime; Current density; Mathematical model; Optimization; Semiconductor optical amplifiers; Switches; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location
Raleigh, NC
Print_ISBN
978-1-4673-0802-1
Electronic_ISBN
978-1-4673-0801-4
Type
conf
DOI
10.1109/ECCE.2012.6342394
Filename
6342394
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