• DocumentCode
    1998619
  • Title

    Dual-GCT design criteria and voltage scaling

  • Author

    Van Brunt, Edward ; Huang, Alex Q. ; Butschen, Thomas ; De Doncker, Rik W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    2012
  • fDate
    15-20 Sept. 2012
  • Firstpage
    2596
  • Lastpage
    2603
  • Abstract
    Global optimization has been performed to derive optimal Dual-GCT structures for 3.3 kV, 5 kV, and 6.5 kV class devices by using numerical simulation results. A treatment of all relevant physical concepts for both standard- and Dual-GCTs are taken into account in the optimization process, providing an insight into the effect of design parameters such as minority carrier lifetime, buffer region design, and device geometry. The results indicate that within the scope of a Dual Active Bridge power converter application, the Dual-GCT can provide more than 54 % improvement in the current density when compared to equivalent conventional devices for each of the device ratings examined, which verifies the scalability of the Dual-GCT concept.
  • Keywords
    current density; numerical analysis; optimisation; power aware computing; power convertors; current density; design parameters; device ratings; dual active bridge power converter application; dual-GCT design criteria; equivalent conventional devices; global optimization process; optimal dual-GCT structures; physical concepts; voltage 3.3 kV; voltage 5 kV; voltage 6.5 kV; voltage scaling; Charge carrier lifetime; Current density; Mathematical model; Optimization; Semiconductor optical amplifiers; Switches; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
  • Conference_Location
    Raleigh, NC
  • Print_ISBN
    978-1-4673-0802-1
  • Electronic_ISBN
    978-1-4673-0801-4
  • Type

    conf

  • DOI
    10.1109/ECCE.2012.6342394
  • Filename
    6342394