DocumentCode :
1998619
Title :
Dual-GCT design criteria and voltage scaling
Author :
Van Brunt, Edward ; Huang, Alex Q. ; Butschen, Thomas ; De Doncker, Rik W.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear :
2012
fDate :
15-20 Sept. 2012
Firstpage :
2596
Lastpage :
2603
Abstract :
Global optimization has been performed to derive optimal Dual-GCT structures for 3.3 kV, 5 kV, and 6.5 kV class devices by using numerical simulation results. A treatment of all relevant physical concepts for both standard- and Dual-GCTs are taken into account in the optimization process, providing an insight into the effect of design parameters such as minority carrier lifetime, buffer region design, and device geometry. The results indicate that within the scope of a Dual Active Bridge power converter application, the Dual-GCT can provide more than 54 % improvement in the current density when compared to equivalent conventional devices for each of the device ratings examined, which verifies the scalability of the Dual-GCT concept.
Keywords :
current density; numerical analysis; optimisation; power aware computing; power convertors; current density; design parameters; device ratings; dual active bridge power converter application; dual-GCT design criteria; equivalent conventional devices; global optimization process; optimal dual-GCT structures; physical concepts; voltage 3.3 kV; voltage 5 kV; voltage 6.5 kV; voltage scaling; Charge carrier lifetime; Current density; Mathematical model; Optimization; Semiconductor optical amplifiers; Switches; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
Type :
conf
DOI :
10.1109/ECCE.2012.6342394
Filename :
6342394
Link To Document :
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