DocumentCode :
1999034
Title :
A high-quality factor piezoelectric-on-substrate phononic crystal micromechanical resonator
Author :
Mohammadi, Saeed ; Eftekhar, Ali A. ; Khelif, Abdelkrim ; Adibi, Ali
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2009
fDate :
20-23 Sept. 2009
Firstpage :
1158
Lastpage :
1160
Abstract :
In this paper phononic crystal (PnC) micromechanical structures with phononic band gaps (PnBGs) are used to effectively confine acoustic modes in a resonator. Two different types of resonant modes are obtained at ~130 MHz with measured quality factors (Qs) of ~3,600 and ~10,000 in air. The PnC resonator is fabricated on a silicon on isolator (SOI) substrate with silicon (Si) layer thickness of 15 ¿m. The modes in the resonator are excited by a thin piezoelectric zinc oxide (ZnO) layer sputtered and patterned on the Si slab. The ZnO layer is sandwiched between two metallic electrodes. The shape of the top electrode and the design of the resonator result in the excitation of an anti-symmetric and a symmetric resonant mode. The mode shapes and resonance frequencies of these two modes are obtained using finite element method and the results are in a very good agreement with the experimental data. The electrical characteristics of the resonant modes are extracted by fitting a Buttherworth-Van-Dyke model. The measured results verify the effectiveness of these PnC structures in confining different types of modes in a resonant region and show their potential in realizing resonators with better performance over their conventional counterparts.
Keywords :
II-VI semiconductors; acoustic resonators; crystal resonators; finite element analysis; micromechanical resonators; phononic crystals; piezoelectric materials; silicon-on-insulator; wide band gap semiconductors; zinc compounds; Buttherworth-Van-Dyke model; PnC micromechanical resonator; Si; ZnO; acoustic mode confinement; acoustic resonator; antisymmetric resonant mode; finite element method; high quality factor piezoelectric-on-substrate phononic crystal; phononic band gap; resonance frequency; silicon on isolator substrate; sputtering; Acoustic measurements; Electrodes; Isolators; Micromechanical devices; Photonic band gap; Q factor; Resonance; Shape; Silicon; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
ISSN :
1948-5719
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
Type :
conf
DOI :
10.1109/ULTSYM.2009.5441752
Filename :
5441752
Link To Document :
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