Modeling the Gate Capacitance Nonlinearity in GaAs MESFET´s

Accurate large-signal circuit models for GaAs MESFET´s require a correct description of the nonlinear voltage dependence of the gate Schottky capacitance. This work describes an investigation of the physical basis of measured capacitance-voltage data using a l-dimensional model, and simple curve-fitting formulas are presented which enable close fitting of experimental results from several devices. A description of the incorporation of one such model in the SPICE time-domain simulator is provided.