Nonlinearities of the GaAs Submicrometer F.E.T.: New Mode of Characterization and Modelization

We propose a new mode of characterization and modelization of GaAs Submicrometer Single and Dual-Gate F.E.T. in nonlinear and microwave frequency operating. Conventional nonlinear characterisation employs a nonaccurate d.c. measurements. In this paper, we suggest to use experimental values of dynamic parameters measured in microwave frequency range. Thus, we achieve an accurate quasi-static-characteristic valuable in nonlinear and microwave frequency. The classical modelization of the F.E.T. consists to consider the device as a black-box and to represent the electrical dependance by a phenomenological expression as simple as possible. We suggest to modelize the microwave voltage dependance of the dynamic parameter Gm instead to modelize the d.c. current dependance. Further, original expressions of Gm and drain-current are proposed. Finally, we prove the validity of our improved mode of characterization and modelization.