• DocumentCode
    1999226
  • Title

    Effect of annealing gas ratio for low resistance p — type ZnO formation

  • Author

    Hamid, Hanizah Ab ; Yusoff, Mohd Zulfadli Mohamed ; Zawawi, S.A.

  • Author_Institution
    Dept. of Appl. Sci., Univ. Teknol. MARA, Permatang Pauh, Malaysia
  • fYear
    2012
  • fDate
    3-4 Dec. 2012
  • Firstpage
    879
  • Lastpage
    881
  • Abstract
    Codoped ZnO thin films were prepared on silicon (111) substrates by cosputtering of aluminium rods and zinc target using DC magnetron sputtering followed by heat treatment at 300°C for 1 hour at different ratios of oxygen and nitrogen gas. Results indicated that the co doped p-type ZnO had the lowest resistivity of 3.412 × 10-3 Ω.cm with a carrier concentration of 1.54 × 1022 cm-3.
  • Keywords
    II-VI semiconductors; aluminium; annealing; carrier density; electrical resistivity; nitrogen; semiconductor doping; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; DC magnetron sputtering; Si; ZnO; aluminium rod target; annealing gas ratio; carrier concentration; codoping; heat treatment; low resistance p-type zinc oxide; nitrogen gas; oxygen gas; resistivity; silicon (111) substrates; temperature 300 degC; thin films; time 1 h; zinc target; nitrogen; oxygen; sputtering; zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Humanities, Science and Engineering (CHUSER), 2012 IEEE Colloquium on
  • Conference_Location
    Kota Kinabalu
  • Print_ISBN
    978-1-4673-4615-3
  • Type

    conf

  • DOI
    10.1109/CHUSER.2012.6504440
  • Filename
    6504440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1999226