Title :
Effect of annealing gas ratio for low resistance p — type ZnO formation
Author :
Hamid, Hanizah Ab ; Yusoff, Mohd Zulfadli Mohamed ; Zawawi, S.A.
Author_Institution :
Dept. of Appl. Sci., Univ. Teknol. MARA, Permatang Pauh, Malaysia
Abstract :
Codoped ZnO thin films were prepared on silicon (111) substrates by cosputtering of aluminium rods and zinc target using DC magnetron sputtering followed by heat treatment at 300°C for 1 hour at different ratios of oxygen and nitrogen gas. Results indicated that the co doped p-type ZnO had the lowest resistivity of 3.412 × 10-3 Ω.cm with a carrier concentration of 1.54 × 1022 cm-3.
Keywords :
II-VI semiconductors; aluminium; annealing; carrier density; electrical resistivity; nitrogen; semiconductor doping; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; DC magnetron sputtering; Si; ZnO; aluminium rod target; annealing gas ratio; carrier concentration; codoping; heat treatment; low resistance p-type zinc oxide; nitrogen gas; oxygen gas; resistivity; silicon (111) substrates; temperature 300 degC; thin films; time 1 h; zinc target; nitrogen; oxygen; sputtering; zinc oxide;
Conference_Titel :
Humanities, Science and Engineering (CHUSER), 2012 IEEE Colloquium on
Conference_Location :
Kota Kinabalu
Print_ISBN :
978-1-4673-4615-3
DOI :
10.1109/CHUSER.2012.6504440
