Dual material gate field effect transistor (DMGFET)

Author

Wei Long ; Chin, K.K.

Author_Institution

Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

549

Lastpage

552

Abstract

A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.

Keywords

field effect transistors; work function; DMGFET; HFET; MESFET; MOSFET; charge carrier acceleration; dual material gate FET; field effect transistor; gate structure; laterally contacting materials; material work function difference; screening effect; short channel effects suppression; threshold voltage; work functions; Analog integrated circuits; Charge carriers; Digital integrated circuits; FET integrated circuits; HEMTs; High speed integrated circuits; MESFET integrated circuits; MODFETs; MOSFET circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650445

Filename

650445