Title :
A common power-stage cellular/PCS/W-CDMA triple-band MMIC power amplifier
Author :
Kim, Ki Young ; Kim, Ji Hoon ; Noh, Youn Sub ; Park, Chul Soon
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejeon, South Korea
Abstract :
This paper describes the design and experimental results of an InGaP/GaAs hetero-junction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier for cellular (850 MHz)/PCS(1750 MHz)/W-CDMA (1950 MHz) triple-band mobile terminal applications. This two-stage power amplifier has only one power-stage in common for the triple bands to achieve a small chip and module size for low manufacturing cost. In order to reduce quiescent current for cellular band, the band selecting circuit to control bias current is used to the power-stage amplifier. This power amplifier has the power gain of 30 dB (26 dB, 25 dB) for cellular (PCS, W-CDMA) band and power-added efficiency (PAE) of 43% at the output of 28 dBm for cellular band under 3.4 V operation voltage.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; broadband networks; cellular radio; code division multiple access; gallium arsenide; gallium compounds; indium compounds; integrated circuit design; personal communication networks; radiofrequency amplifiers; 1750 MHz; 1950 MHz; 3.4 V; 30 dB; 43 percent; 850 MHz; InGaP-GaAs; WCDMA; cellular band; heterojunction bipolar transistor; monolithic microwave integrated circuit; power-added efficiency; power-stage cellular; quiescent current; triple-band MMIC power amplifier; wideband code division multiple access; Application specific integrated circuits; Bipolar integrated circuits; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave integrated circuits; Multiaccess communication; Personal communication networks; Power amplifiers;
Conference_Titel :
Radio and Wireless Conference, 2003. RAWCON '03. Proceedings
Print_ISBN :
0-7803-7829-6
DOI :
10.1109/RAWCON.2003.1227948
