Title :
A high gain flatness high linearity down conversion mixer for Ku band application
Author :
Weng, Ro-Min ; Zeng, Ming-Jhe ; Liu, Chun-Yu
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
A high linearity down-conversion mixer for 12-18GHz Ku band application is presented in this paper. The proposed mixer based on Gilbert cell obtains high gain flatness. Bias current decoupling technique is adopted to suppress noise at the output. Current-injection circuit and resonating inductors at the source of switching stage are added to improve the gain flatness and linearity. The proposed mixer is simulated with TSMC 0.18μm 1P6M CMOS process. The conversion gain of 7.32±0.8dB is achieved over the entire bandwidth. The minimum double-sideband noise figure is 17.26dB. The maximum input third-order intercept point (IIP3) is 3.5dBm at 14.5GHz. The power consumption is 6.36mW at 1.2V supply voltage. The chip size including pads for further measurement is 0.9×0.983mm2.
Keywords :
CMOS integrated circuits; field effect MMIC; low-power electronics; microwave mixers; Gilbert cell; Ku band application; TSMC 0.18μm 1P6M CMOS process; bias current decoupling technique; current-injection circuit; frequency 12 GHz to 18 GHz; high gain flatness high linearity down conversion mixer; maximum input third-order intercept point; noise figure 17.26 dB; power 6.36 mW; resonating inductors; size 0.18 mum; voltage 1.2 V; CMOS integrated circuits; Gain; Inductors; Linearity; Mixers; Noise; Radio frequency; CMOS; Ku band; gain flatness; linearity; mixer;
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
DOI :
10.1109/ISCAS.2011.5938174