Author :
Swerts, Johan ; Popovici, Mihaela ; Kaczer, Ben ; Aoulaiche, Marc ; Redolfi, A. ; Clima, S. ; Caillat, Christian ; Wan Chih Wang ; Afanasev, Valeri V. ; Jourdan, Nicolas ; Olk, Christina ; Hody, Hubert ; Van Elshocht, S. ; Jurczak, Malgorzata
Abstract :
Leakage currents as low as 10-7 A/cm2 at both 1 V and -1 V top electrode bias in the sub-0.4-nm equivalent SiO2 thickness range are demonstrated in Ru/SrTiOx/Ru metal- insulator-metal capacitors in which the 8.5-nm SrTiOx layer is deposited by atomic layer deposition. The top electrode material and deposition technique as well as the postdeposition anneal are crucial parameters to control the leakage, not only at negative, but also at positive top electrode bias.
Keywords :
MIM structures; atomic layer deposition; capacitors; leakage currents; ruthenium; strontium compounds; Ru-SrTiO-Ru; atomic layer deposition; deposition technique; leakage control; leakage currents; metal insulator metal capacitors; top electrode material; voltage 1 V; Capacitors; Electrodes; Leakage currents; MIM capacitors; Random access memory; Tin; Capacitors; DRAM; Ru; SrTiO₃; SrTiO3; dielectric devices; leakage currents;
