Title :
Fully integrated differential VCO with buffer amplifier using 0.35 3μm SiGe BiCMOS for C-Band wireless RE transceiver
Author :
Kim, Young Gi ; Kim, Hyun Soo ; Bae, Lung Hyung ; Oh, Jae Hyun ; Kim, Chanp Woo
Author_Institution :
Dept. of Data Commun., Anyang Univ., South Korea
Abstract :
This paper addresses fully integrated positive tuning differential 4.7 GHz VCO fabricated in 0.35 μm SiGe BiCMOS process with ft of 45 GHz utilizing ground shield layer structure upon low resistive silicon substrate. VCO circuit consists of a cross-coupled differential pair with a parallel resonator connected between the collector nodes and a pair of emitter-following buffer amplifiers. The VCO achieves -5.17 dBm output power with positive tuning frequency range of 509 MHz by positive voltage tuning of 3 V and exhibits -107 dBc/Hz phase noise at 1 MHz away from 4.64 GHz oscillating frequency. The oscillator draws 18 mA current from a 3V supply and occupies 0.67 mm by 0.97 mm die area.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; buffer circuits; circuit tuning; phase noise; radiofrequency amplifiers; resonators; semiconductor materials; silicon compounds; substrates; transceivers; voltage-controlled oscillators; 0.35 mum; 1 MHz to 4.64 GHz; 18 mA; 3 V; 4.64 GHz; 45 GHz; 509 MHz; C-band wireless RE transceiver; SiGe BiCMOS; SiGe-Si; buffer amplifier; collector nodes; emitter-following buffer amplifiers; fully integrated differential VCO; ground shield layer structure; low resistive silicon substrate; oscillating frequency; parallel resonator; phase noise; positive tuning frequency; positive voltage tuning; voltage controlled oscillator; BiCMOS integrated circuits; Circuit optimization; Differential amplifiers; Frequency; Germanium silicon alloys; Power generation; Silicon germanium; Transceivers; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Radio and Wireless Conference, 2003. RAWCON '03. Proceedings
Print_ISBN :
0-7803-7829-6
DOI :
10.1109/RAWCON.2003.1227951
