DocumentCode :
1999314
Title :
Hygrothermal ageing of a filled epoxy resin: Measurements of the insulation properties and qualitative modelling
Author :
Rain, Pascal ; Brun, E. ; Guillermin, C. ; Rowe, S.
Author_Institution :
Grenoble Electr. Eng. Lab. (G2Elab), Univ. of Grenoble, Grenoble, France
fYear :
2010
fDate :
4-9 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
Samples of epoxy filled with silica have been subjected to hygrothermal aging at 80°C and 80% relative humidity for several months. These samples were characterized by the measurements of resistances, partial discharges and breakdown voltages. Results for both silanized and non-silanized fillers were obtained. After ageing, large differences were observed in both breakdown voltage and resistance. The breakdown voltage was reduced by a factor of 10 after 74 days of ageing without silanization whereas the decrease was a factor of 2 with silanized fillers. The resistance was reduced by more than 4 decades in the former case and one decade in the second case. The breakdown was preceded by the occurrence of partial discharges. Partial Discharges Inception Voltage (PDIV) dropped by a factor of 10 between 32 days and 74 days of ageing. The PDIV was sensitive to the sample temperature: it was lower at larger temperatures. Partial Discharges (PD) patterns suggest that the discharges occurred in gaseous cavities. Based upon these measurements, a model of breakdown phenomenon based upon cavities filled of water vapour is proposed and discussed.
Keywords :
ageing; epoxy insulation; partial discharges; PDIV; breakdown phenomenon; breakdown voltages; filled epoxy resin; hygrothermal ageing; insulation properties; nonsilanized fillers; partial discharges; partial discharges inception voltage; qualitative modelling; Dielectrics; Solids; ageing; aging; breakdown; composite; epoxy; hygrothermal ageing; hygrothermal aging; partial discharge; water;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on
Conference_Location :
Potsdam
Print_ISBN :
978-1-4244-7945-0
Electronic_ISBN :
978-1-4244-7943-6
Type :
conf
DOI :
10.1109/ICSD.2010.5567864
Filename :
5567864
Link To Document :
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