Title :
High performance and large area flip-chip bonded AlGaN/GaN MODFETs
Author :
Thibeault, Brian J. ; Keller, B.P. ; Fini, Pedro ; Mishra, Umesh K. ; Nguyen, Cam ; Nguyen, N.X. ; Le, Matthew
Author_Institution :
WideGap Technol., Goleta, CA, USA
Abstract :
Using flip-chip bonding for thermal management, we improve the performance of AlGaN/GaN MODFETs grown on sapphire substrates. Current density and transconductance increase from 1.1 A/mm and 200 mS/mm to 1.6 A/mm and 280 mS/mm due to improved thermal resistance. We have also made wide gate (1 mm and 2 mm) MODFETs for the first time using this approach. DC and RF device results are presented.
Keywords :
III-V semiconductors; aluminium compounds; current density; flip-chip devices; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; sapphire; semiconductor device packaging; thermal resistance; wide band gap semiconductors; 1 mm; 2 mm; 200 mS/mm; 280 mS/mm; Al/sub 2/O/sub 3/; AlGaN-GaN; AlGaN/GaN MODFETs; HEMT; current density; high performance devices; large area flip-chip bonded devices; sapphire substrates; thermal management; thermal resistance; transconductance; wide gate MODFETs; Aluminum gallium nitride; Bonding; Current density; Gallium nitride; HEMTs; MODFETs; Radio frequency; Thermal management; Thermal resistance; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650450
