DocumentCode
1999366
Title
Microstructure studies of InGaN/GaN multiple quantum wells
Author
Yen-Sheng Lin ; Chen Hsu ; Kung-Jeng Ma ; Shih-Wei Feng ; Yung-Chen Cheng ; Yi-Yin Chung ; Chih-Wei Liu ; Yang, C.C. ; Jen-Inn Chyi
Author_Institution
Dept. of Mech. Eng., Chung Cheng Inst. of Technol., Taoyuan, Taiwan
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
Material microanalyses of InGaN/GaN quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.
Keywords
III-V semiconductors; X-ray chemical analysis; X-ray diffraction; atomic force microscopy; crystal microstructure; gallium compounds; indium compounds; semiconductor quantum wells; transmission electron microscopy; InGaN-GaN; InGaN/GaN multiple quantum wells; V-shape defects; indium-aggregated clusters; indium-rich precipitates; lower indium contents; material microanalyses; microstructure studies; Atomic force microscopy; Atomic measurements; Carrier confinement; Fluctuations; Force measurement; Gallium nitride; Indium; Mechanical engineering; Microstructure; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970887
Filename
970887
Link To Document