Title :
Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures
Author :
Shih-Wei Feng ; Yung-Chen Cheng ; Yang, C.C. ; Chin-Yi Tsai ; Yen-Sheng Lin ; Chen Hsu ; Kung-Jeng Ma ; Jen-Inn Chyi
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; superradiance; time resolved spectra; InGaN-GaN; InGaN/GaN multiple quantum well structures; amplified spontaneous emission; carrier localization; time-resolved photoluminescence; two-component decay times; two-component photoluminescence decay; Buffer layers; Curve fitting; Equations; Gallium nitride; Indium; MOCVD; Mechanical engineering; Photoluminescence; Radiative recombination; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970888
