DocumentCode :
19994
Title :
An Unconventional Hybrid Variable Capacitor With a 2-D Electron Gas
Author :
Dianat, Pouya ; Prusak, Richard ; Persano, Anna ; Cola, Adriano ; Quaranta, Fabio ; Nabet, Bahram
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
Volume :
61
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
445
Lastpage :
451
Abstract :
Moderation of internal quantum mechanical energies, such as exchange energy of an unconventional contact, comprised of a system of 2-D charge carriers, improves performance merits of variable capacitors, varactors, mainly in tuning ratio (TR), and sensitivity, S. Energy transfer from the unconventional contact to the dielectric increases the energy density and enhances the capacitance of the varactor. Here, we analyze the performance of an unconventional varactor based on a planar metal-semiconductor-metal (MSM) structure with an embedded layer of high-density 2-D electron gas (2DEG). Through localized field-assisted manipulation of the 2DEG density, a twice larger equilibrium capacitance and a minimum capacitance, less than the geometric capacitance of a conventional MSM, are achieved. Moreover, the maximum capacitance increases through a Batman-shaped capacitance enhancement at a threshold voltage. Therefore, giant is attained while maintaining quality factors of up to 30. Capacitance-voltage characteristics exhibit a switched-capacitor behavior with S as high as 350 that is due to localized transitions from a dense 2DEG to a complete depletion. This MSM 2-D varactor combines the unconventional features of 2DEG with superior electrical properties of MSMs.
Keywords :
metal-semiconductor-metal structures; two-dimensional electron gas; varactors; 2D charge carrier; 2D electron gas; Batman shaped capacitance enhancement; capacitance-voltage characteristics; embedded layer; energy density; exchange energy; internal quantum mechanical energy; localized field assisted manipulation; planar metal-semiconductor-metal structure; unconventional hybrid variable capacitor; unconventional varactor; Capacitance; Cathodes; Gallium arsenide; HEMTs; MODFETs; Varactors; 2-D electron gas (2DEG); Schottky; capacitance enhancement; metal–semiconductor–metal (MSM); variable capacitor;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2292922
Filename :
6680750
Link To Document :
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