DocumentCode :
1999430
Title :
Maximum drain efficiency class F3 RF power amplifier
Author :
Kazimierczuk, Marian K. ; Wojda, Rafal P.
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
2785
Lastpage :
2788
Abstract :
This paper presents a design procedure for the class F3 RF power amplifier. The required range of the drain current conduction angle for the class F3 power amplifier is specified. Additionally, an equation for the resistance of the third harmonic resonant circuit is given. Class F3, AB, and C power amplifiers were designed and simulated to compare their respective performance in terms of efficiency.
Keywords :
UHF power amplifiers; analogue circuits; class AB power amplifier; class C power amplifier; drain current conduction angle; maximum drain efficiency class F3 RF power amplifier; third harmonic resonant circuit resistance; Harmonic analysis; Power system harmonics; RLC circuits; Radio frequency; Resistance; Resistors; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5938183
Filename :
5938183
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1999430
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