Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)

Author

Fujii, E. ; Otsuki, T. ; Judai, Y. ; Shimada, Y. ; Azuma, M. ; Uemoto, Y. ; Nagano, Y. ; Nasu, T. ; Izutsu, Y. ; Matsuda, A. ; Nakao, K. ; Tanaka, K. ; Hirano, K. ; Ito, T. ; Mikawa, T. ; Kutsunai, T. ; McMillan, L.D. ; Paz de Araujo, C.A.

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

597

Lastpage

600

Abstract

A highly-reliable ferroelectric memory (FeRAM) which ensures retention of data written at a low voltage of 2.5 V and humidity resistance for 10 years under a high temperature of 70/spl deg/C has been successfully developed for the first time. These excellent characteristics have been attained by a newly developed ferroelectric material with mixed superlattice crystal of Y-1 family and a integration technology which makes the use of pl-SiN passivation possible.

Keywords

bismuth compounds; ferroelectric storage; ferroelectric thin films; humidity; integrated circuit reliability; integrated circuit technology; integrated memory circuits; passivation; random-access storage; superlattices; 10 yr; 2.5 V; 70 C; Bi layer structured thin films; RAM; SiN; SiN passivation; Y-1 family; ferroelectric memory technology; highly-reliable memory technology; humidity resistance; integration technology; mixed superlattice crystal; nonvolatile memory; Ferroelectric films; Ferroelectric materials; Humidity; Hydrogen; Low voltage; Nonvolatile memory; Passivation; Plasma applications; Random access memory; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650455

Filename

650455