Author :
Fujii, E. ; Otsuki, T. ; Judai, Y. ; Shimada, Y. ; Azuma, M. ; Uemoto, Y. ; Nagano, Y. ; Nasu, T. ; Izutsu, Y. ; Matsuda, A. ; Nakao, K. ; Tanaka, K. ; Hirano, K. ; Ito, T. ; Mikawa, T. ; Kutsunai, T. ; McMillan, L.D. ; Paz de Araujo, C.A.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A highly-reliable ferroelectric memory (FeRAM) which ensures retention of data written at a low voltage of 2.5 V and humidity resistance for 10 years under a high temperature of 70/spl deg/C has been successfully developed for the first time. These excellent characteristics have been attained by a newly developed ferroelectric material with mixed superlattice crystal of Y-1 family and a integration technology which makes the use of pl-SiN passivation possible.
Keywords :
bismuth compounds; ferroelectric storage; ferroelectric thin films; humidity; integrated circuit reliability; integrated circuit technology; integrated memory circuits; passivation; random-access storage; superlattices; 10 yr; 2.5 V; 70 C; Bi layer structured thin films; RAM; SiN; SiN passivation; Y-1 family; ferroelectric memory technology; highly-reliable memory technology; humidity resistance; integration technology; mixed superlattice crystal; nonvolatile memory; Ferroelectric films; Ferroelectric materials; Humidity; Hydrogen; Low voltage; Nonvolatile memory; Passivation; Plasma applications; Random access memory; Superlattices;
