Title :
Preparation of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films with ultra-high resistance to annealing in hydrogen atmosphere for ferroelectric memories
Author :
Kanehara, T. ; Koiwa, I. ; Okada, Y. ; Ashikaga, K. ; Katoh, H. ; Kaifu, K.
Author_Institution :
Adv. Mater. Project, Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) films are fatigue-free and provide low-voltage operation. After annealing in a hydrogen atmosphere, however, such as in passivation, SBT films are reduced and their electrical properties deteriorate. We clarify the degradation mechanism and focus on preparing of SBT films highly resistant to annealing in a hydrogen atmosphere.
Keywords :
annealing; bismuth compounds; coating techniques; ferroelectric storage; ferroelectric thin films; hydrogen; materials preparation; passivation; strontium compounds; H atmosphere; H/sub 2/; SBT films; SrBi/sub 2/Ta/sub 2/O/sub 9/; SrBi/sub 2/Ta/sub 2/O/sub 9/ thin film preparation; annealing; degradation mechanism; electrical properties; ferroelectric memory application; low-voltage operation; ultra-high annealing resistance; Annealing; Atmosphere; Bismuth; Electrodes; Grain boundaries; Hydrogen; Hysteresis; Passivation; Sputtering; Transistors;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650456
