DocumentCode
1999551
Title
A Millimeter Wave Quantum Well Diode Oscillator
Author
Grönqvist, H. ; Rydberg, A. ; Hjelmgren, H. ; Zirath, H. ; Kollberg, E. ; Söderström, J. ; Andersson, T.
Author_Institution
Chalmers University of Technology, Göteborg, SWEDEN.
fYear
1988
fDate
12-15 Sept. 1988
Firstpage
370
Lastpage
375
Abstract
Experimental results concerning both the DC characteristics and the performance of Quantum Well (QW) diodes as oscillators are given. Two diodes have been manufactured and used in the work where the main difference between them is the doping profile outside the double barrier structure. I-V curves are presented to demonstrate the importance of these design parameters. Also presented are state of the art results for QW oscillators: 84 ¿W at 77 K and 60 ¿W at room temperature for a 90 GHz oscillator and 1 ¿W at 176 GHz also at room temperature.
Keywords
Diodes; Electrons; Gallium arsenide; Manufacturing; Microwave oscillators; Millimeter wave technology; Molecular beam epitaxial growth; Ohmic contacts; Temperature dependence; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1988. 18th European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1988.333842
Filename
4132530
Link To Document