Title :
A Millimeter Wave Quantum Well Diode Oscillator
Author :
Grönqvist, H. ; Rydberg, A. ; Hjelmgren, H. ; Zirath, H. ; Kollberg, E. ; Söderström, J. ; Andersson, T.
Author_Institution :
Chalmers University of Technology, Göteborg, SWEDEN.
Abstract :
Experimental results concerning both the DC characteristics and the performance of Quantum Well (QW) diodes as oscillators are given. Two diodes have been manufactured and used in the work where the main difference between them is the doping profile outside the double barrier structure. I-V curves are presented to demonstrate the importance of these design parameters. Also presented are state of the art results for QW oscillators: 84 ¿W at 77 K and 60 ¿W at room temperature for a 90 GHz oscillator and 1 ¿W at 176 GHz also at room temperature.
Keywords :
Diodes; Electrons; Gallium arsenide; Manufacturing; Microwave oscillators; Millimeter wave technology; Molecular beam epitaxial growth; Ohmic contacts; Temperature dependence; Tunneling;
Conference_Titel :
Microwave Conference, 1988. 18th European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1988.333842
