DocumentCode :
1999569
Title :
A low-loss high-isolation absorptive GaAs SPDT PIN switch for 24 GHz automotive applications
Author :
Büber, Tekamül ; Kolak, Frank ; Kinayman, Noyan ; Bennett, Jacqueline
Author_Institution :
M/A-COM, Corporate Res. & Dev., Lowell, MA
fYear :
2003
fDate :
2003
Firstpage :
349
Lastpage :
352
Abstract :
Design of a low-loss high-isolation absorptive GaAs SPDT PIN diode switch at 24 GHz is presented. The switch incorporates a total of 6 PIN diodes, i.e., 3 diodes in each arm. Two of the diodes are for high isolation purposes and the third diode provides the matched load to the isolated port. The measured insertion loss and isolation are better than 1.4 dB and 47 dB, respectively, in the frequency band 22 to 26 GHz. The input and output return losses are better than 12 dB in the same frequency band
Keywords :
III-V semiconductors; automotive electronics; gallium arsenide; losses; microwave switches; millimetre wave diodes; p-i-n diodes; semiconductor switches; 22 to 26 GHz; GaAs; GaAs SPDT PIN diode switch; absorptive switch; automotive applications; high resolution radar; high-isolation switch; insertion loss; isolation loss; low-loss switch; millimeter-wave diode; Automotive applications; Circuit simulation; Communication switching; Diodes; Frequency; Gallium arsenide; Insertion loss; Radar; Resistors; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio and Wireless Conference, 2003. RAWCON '03. Proceedings
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-7829-6
Type :
conf
DOI :
10.1109/RAWCON.2003.1227964
Filename :
1227964
Link To Document :
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