A low-loss high-isolation absorptive GaAs SPDT PIN switch for 24 GHz automotive applications

Author

Büber, Tekamül ; Kolak, Frank ; Kinayman, Noyan ; Bennett, Jacqueline

Author_Institution

M/A-COM, Corporate Res. & Dev., Lowell, MA

fYear

2003

fDate

2003

Firstpage

349

Lastpage

352

Abstract

Design of a low-loss high-isolation absorptive GaAs SPDT PIN diode switch at 24 GHz is presented. The switch incorporates a total of 6 PIN diodes, i.e., 3 diodes in each arm. Two of the diodes are for high isolation purposes and the third diode provides the matched load to the isolated port. The measured insertion loss and isolation are better than 1.4 dB and 47 dB, respectively, in the frequency band 22 to 26 GHz. The input and output return losses are better than 12 dB in the same frequency band

Keywords

III-V semiconductors; automotive electronics; gallium arsenide; losses; microwave switches; millimetre wave diodes; p-i-n diodes; semiconductor switches; 22 to 26 GHz; GaAs; GaAs SPDT PIN diode switch; absorptive switch; automotive applications; high resolution radar; high-isolation switch; insertion loss; isolation loss; low-loss switch; millimeter-wave diode; Automotive applications; Circuit simulation; Communication switching; Diodes; Frequency; Gallium arsenide; Insertion loss; Radar; Resistors; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings

Conference_Location

Boston, MA

Print_ISBN

0-7803-7829-6

Type

conf

DOI

10.1109/RAWCON.2003.1227964

Filename

1227964