Title :
Ultra-thin EBL (encapsulated barrier layer) for ferroelectric capacitor
Author :
In Seon park ; Yeong Kwan Kim ; Sang Min Lee ; Ju Hyuck Chung ; Sang Bom Kang ; Chang Soo Park ; Cha Young Yoo ; Sang In Lee ; Moon Yong Lee
Author_Institution :
Process Dev. Team, Samsung Electron. Co., Kyungki-do, South Korea
Abstract :
A new EBL (encapsulating barrier layer), Al/sub 2/O/sub 3/, was developed in order to preserve the excellent ferroelectric characteristics of PZT capacitors throughout the integration process of FRAMs. From the fully working double-level metal, one-poly, 1T/1C 64 k PZT FRAM, Al/sub 2/O/sub 3/ films with thickness in the range of 60 /spl Aring/ to 100 /spl Aring/ showed excellent barrier properties against the hydrogen attack, reaction between PZT film and IMD, and out diffusion of the volatile component in the capacitor. Moreover, the excellent insulating properties of ultra-thin Al/sub 2/O/sub 3/ EBL offered the reduction of one photo/etch step during the full integration process, which required for the conventional TiO/sub 2/ one.
Keywords :
alumina; diffusion barriers; encapsulation; ferroelectric capacitors; ferroelectric storage; insulating thin films; lead compounds; piezoceramics; random-access storage; 64 kbit; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ film; IMD reaction; PZT; PbZrO3TiO3; double-level metal one-poly 1T/1C PZT FRAM; encapsulated barrier layer; ferroelectric capacitor; hydrogen attack; insulating properties; integration process; nonvolatile memory; photo/etch step; ultra-thin EBL; volatile component out-diffusion; Adhesives; Annealing; Capacitors; Ferroelectric films; Ferroelectric materials; Hydrogen; Insulation; Nonvolatile memory; Plasma properties; Random access memory;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650460
