Title :
Advances in silicon semiconductor device technology for radio and wireless applications
Author :
Larson, Lawrence E.
Author_Institution :
Center for Wireless Commun., California Univ., La Jolla, CA, USA
Abstract :
Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration. Technology scaling, both at the transistor and back-end metallization level, has driven this progress. This paper summarizes the silicon technology advances associated with radio and wireless applications.
Keywords :
elemental semiconductors; isolation technology; monolithic integrated circuits; semiconductor devices; silicon; substrates; transistors; RF applications; Si; back-end metallization level; integrated circuit technology; isolation technology; microwave application; radio applications; semiconductor device technology; silicon technology; substrate; technology scaling; transistor; wireless applications; CMOS technology; Conductivity; Integrated circuit technology; Isolation technology; MOSFETs; Microwave technology; Radio frequency; Semiconductor devices; Silicon; Substrates;
Conference_Titel :
Radio and Wireless Conference, 2003. RAWCON '03. Proceedings
Print_ISBN :
0-7803-7829-6
DOI :
10.1109/RAWCON.2003.1227965
