SrBi/sub 2/TaO/sub 9/ thin film capacitor model including polarization reversal response for nanosecond range circuit simulation of ferroelectric nonvolatile memory

Author

Takeo, M. ; Azuma, M. ; Hirano, H. ; Asari, K. ; Moriwaki, N. ; Otsuki, T. ; Tatsuuma, K.

Author_Institution

ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

621

Lastpage

624

Abstract

An SrBi/sub 2/Ta/sub 2/O/sub 9/ thin film capacitor model including polarization reversal response based on P-t curves is proposed for the nanosecond range circuit simulations of ferroelectric nonvolatile memories (NVFRAMs). The circuit simulation for the READ/WRITE operation of the NVFRAM is realized by the capacitor model and it´s unique parameter extraction method. This approach provides a significant means for predicting the READ/WRITE operations of the NVFRAMs in the range from 10 ns to 1 /spl mu/s.

Keywords

bismuth compounds; circuit analysis computing; ferroelectric storage; ferroelectric thin films; random-access storage; strontium compounds; thin film capacitors; 10 ns to 1 mus; NVFRAMs; SrBi/sub 2/TaO/sub 9/; ferroelectric nonvolatile memory; nanosecond range circuit simulation; parameter extraction method; polarization reversal response; read/write operation; thin film capacitor model; Capacitors; Electrodes; Equations; Ferroelectric materials; Parameter extraction; Polarization; Powders; Pulse measurements; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650461

Filename

650461