• DocumentCode
    1999679
  • Title

    GaAs Fully Monolithic X Band SPDT Switch with Integrated TTL Compatible Driver

  • Author

    Versnaeyen, C. ; Gavant, M. ; Ruggeri, S. ; Brun, M. Le

  • Author_Institution
    THOMSON HYBRIDES ET MICROONDES, DAG ORSAY FRANCE
  • fYear
    1988
  • fDate
    12-15 Sept. 1988
  • Firstpage
    409
  • Lastpage
    414
  • Abstract
    This paper describes the performance of a GaAs monolithic X-Band SPDT switch with integrated BFL driver TTL compatible. A single TTL command voltage is needed to switch the RF signal from one channel to the other. From 8 to 12 GHz, the insertion loss is less than 1.6 dB and the isolation of the disconnected channel greater than 21 dB. The response time of the switch, which was not optimized in the design, was found to be 2 ns. To our knowledge this is the first fully monolithic mixed microwave and digital SPDT switch to be published.
  • Keywords
    Circuits; FETs; Gallium arsenide; Impedance; Insertion loss; MMICs; Phased arrays; Radio frequency; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1988. 18th European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • DOI
    10.1109/EUMA.1988.333848
  • Filename
    4132536