Title :
Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
Author :
Han, L.K. ; Crowder, S. ; Hargrove, M. ; Wu, E. ; Lo, S.H. ; Guarin, F. ; Crabbe, E. ; Su, L.
Author_Institution :
SRDC, IBM Corp., Hopewell Junction, NY, USA
Abstract :
We present a detailed study of electrical characteristics of sub-3 nm gate oxides grown on nitrogen implanted Si substrates (N/sub 2/ I/I oxides). The new results that advance the understanding of N/sub 2/ I/I oxides are the following: lower tunneling current, higher TDDB lifetime and reduced defect density are reported in N/sub 2/ I/I oxides for the first time. In addition, excellent device and circuit performance are demonstrated for dual-gate CMOSFETs with N/sub 2/ VI oxides down to channel lengths under 0.10 /spl mu/m.
Keywords :
CMOS logic circuits; MOSFET; electric breakdown; elemental semiconductors; integrated circuit reliability; ion implantation; nitrogen; silicon; tunnelling; CMOS logic; Si:N; TDDB lifetime; channel lengths; defect density; dual-gate CMOSFETs; electrical characteristics; gate oxides; reliability; tunneling current; CMOS logic circuits; CMOSFET circuits; CMOSFET logic devices; Circuit optimization; Electric variables; Implants; Nitrogen; Resists; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650466
