• DocumentCode
    1999815
  • Title

    Multilane Racetrack caches: Improving efficiency through compression and independent shifting

  • Author

    Haifeng Xu ; Yong Li ; Melhem, Rami ; Jones, Alex K.

  • Author_Institution
    Univ. of Pittsburgh, Pittsburgh, PA, USA
  • fYear
    2015
  • fDate
    19-22 Jan. 2015
  • Firstpage
    417
  • Lastpage
    422
  • Abstract
    Racetrack memory (RM), a spintronic domain-wall non-volatile memory has recently received attention as a high-capacity replacement for various structures in the memory system from secondary storage through caches. The main advantage of RM is an improved density and like other non-volatile memory structures, the static power of RM is dramatically lower than conventional CMOS memories. However, a major challenge of employing RM in universal memory components is the added access latency and dynamic energy consumption caused by shifts to align the data of interest with an access port. We propose multilane Racetrack caches (MRC), a RM last level cache design utilizing lightweight compression combined with independent shifting. MRC allows cache lines mapped to the same Racetrack structure to be accessed in parallel when compressed, mitigating potential shifting stalls in the RM cache. Our results demonstrate that unlike previously proposed RM caches, an isocapacity MRC cache replacement can outperform SRAM caches while providing energy improvement over STT-MRAM caches. In particular, MRC improves performance by 5% and reduces energy by 19% compared to an isocapacity baseline RM cache resulting in an energy delay product improvement of 25%.
  • Keywords
    cache storage; magnetoelectronics; random-access storage; RM last level cache design; access latency; cache lines; dynamic energy consumption; independent shifting; isocapacity MRC cache replacement; lightweight compression; multilane racetrack caches; racetrack memory; spintronic domain-wall nonvolatile memory; static power; universal memory components; Arrays; Benchmark testing; Energy consumption; Nanowires; Nonvolatile memory; Proposals; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (ASP-DAC), 2015 20th Asia and South Pacific
  • Conference_Location
    Chiba
  • Print_ISBN
    978-1-4799-7790-1
  • Type

    conf

  • DOI
    10.1109/ASPDAC.2015.7059042
  • Filename
    7059042