DocumentCode :
1999828
Title :
A new synthesis methodology for reliable RF front-end Design
Author :
Ferreira, Pietro M. ; Petit, Hervé ; Naviner, Jean-François
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
2926
Lastpage :
2929
Abstract :
A low power and low cost WLAN/WiMAX RF front- end requires more advanced CMOS technologies whose transistor parameters degradation is becoming worse. Few published works has presented the reliability results for RF circuits. In order to fill this gap, we develop a new synthesis methodology for reliable RF front-end design using the design example of a reliable BLIXER. The first steps of our synthesis methodology is a transistor ageing simulation. Then, we calculate an estimation of the circuit performance and ageing using the circuit design equations and the total derivatives. Thus, we can find the required bias and sizing improving the circuit reliability. The simulation results of the typical circuit are coherent with the WLAN/WiMAX RF front-end specifications. Despite the integrated process variability and mismatch, we observe that 96.4 % of the simulation runs have Gain >; 10.0 dB, and 92.1% of the simulation runs have NFmax <; 5.0 dB. Moreover, the BLIXER ageing degradation is negligible according to the fitted Poisson distribution of the power consumption for 99.9% of confidence. Going further, we can say that the synthesis methodology proposed and developed for a RF front-end design can be exploited in different AMS/RF circuits and also generalized for a single bottom- up reliable-system design approach.
Keywords :
CMOS integrated circuits; MOSFET; Poisson distribution; WiMax; integrated circuit design; integrated circuit reliability; low-power electronics; semiconductor process modelling; wireless LAN; AMS-RF circuit; BLIXER ageing degradation; CMOS technology; RF circuit reliability; WLAN-WiMAX RF front-end design; circuit design equation; fitted Poisson distribution; integrated process mismatch; integrated process variability; power consumption; single bottom-up reliable-system design approach; transistor ageing simulation; transistor parameter degradation; Aging; Degradation; Integrated circuit reliability; Mathematical model; Radio frequency; Reliability engineering; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5938204
Filename :
5938204
Link To Document :
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