DocumentCode
1999841
Title
Comparison of crosstalk delay between single and bundled SWNT for global VLSI interconnects
Author
Majumder, Manoj Kumar ; Pandya, Nisarg D. ; Kaushik, B.K. ; Manhas, S.K.
Author_Institution
Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India
fYear
2012
fDate
15-17 March 2012
Firstpage
564
Lastpage
569
Abstract
Carbon nanotubes (CNTs) have been proved as an emerging interconnect material for future nano and deep submicron level technologies. CNTs are more advantageous than copper or other interconnect materials because of their robustness to electromigration. In this paper, single-wall CNT (SWNT)-based interconnects are modeled and the effects of crosstalk are evaluated. On comparing the crosstalk effects for different models of single SWNT and bundled SWNT, it is observed that crosstalk delay is significantly reduced for SWNT bundles at global level of interconnects. Irrespective of the types of SWNTs, crosstalk delay is extensively affected by transition time, diameter of SWNTs and spacing between two lines (aggressor and victim).
Keywords
VLSI; carbon nanotubes; crosstalk; integrated circuit interconnections; nanoelectronics; bundled SWNT diameter; carbon nanotube; crosstalk delay comparison; deep submicron level technology; electromigration; global VLSI interconnect; interconnecting material; nanomicron level technology; single SWNT diameter; single-wall CNT-based interconnect; transition time; Crosstalk; Delay; Inductance; Integrated circuit interconnections; Quantum capacitance; Resistance; Carbon nanotube; SWNT; VLSI; aggressor and victim; crosstalk; nanotechnology; transition time;
fLanguage
English
Publisher
ieee
Conference_Titel
Recent Advances in Information Technology (RAIT), 2012 1st International Conference on
Conference_Location
Dhanbad
Print_ISBN
978-1-4577-0694-3
Type
conf
DOI
10.1109/RAIT.2012.6194590
Filename
6194590
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