Title :
High performance 20 /spl Aring/ NO oxynitride for gate dielectric in deep subquarter micron CMOS technology
Author :
Maiti, B. ; Tobin, P.J. ; Misra, V. ; Hegde, R.I. ; Reid, K.G. ; Gelatos, C.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
In this paper we report excellent performance of 20 /spl Aring/, gate oxide annealed in nitric oxide (NO oxynitride) as gate dielectric in sub-quarter micron CMOSFETs. We show that the degradation of current drive and peak transconductance in MOSFETs, previously observed in oxynitrides, can be eliminated by threshold voltage (Vt). Robust reliability characteristics are described for 20 A NO oxynitride.
Keywords :
CMOS integrated circuits; MOSFET; ULSI; annealing; dielectric thin films; integrated circuit reliability; integrated circuit reliability5802299; leakage currents; vapour deposited coatings; 0.25 micron; 20 angstrom; CMOSFETs; NO; annealing; current drive degradation; deep subquarter micron CMOS; oxynitride gate dielectric; peak transconductance; reliability characteristics; threshold voltage; Boron; CMOS technology; Dielectrics; Furnaces; MOS devices; MOSFETs; Oxidation; Rapid thermal annealing; Thermal degradation; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650468
