Title :
Characterization of aging process in power converters using spread spectrum time domain reflectometry
Author :
Nasrin, M. Sultana ; Khan, Faisal H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA
Abstract :
This paper aims to find a new technique to predict the state of health of power converters by characterizing the most vulnerable components in the converter without affecting the normal circuit operation. Spread spectrum time domain reflectometry (SSTDR) can detect most of the aged components inside the converter while the converter is operational. Semiconductor switches and electrolytic capacitors are the two most sensitive components in power converter circuits, and this paper demonstrated how SSTDR can be used to determine the degradation of these components. Multiple sets of test data have been generated while the SSTDR process is applied to the power MOSFETs, IGBTs connected in a chopper circuit and to the aluminum electrolytic capacitors connected in an RC circuit. Analysis is done on these obtained test data to show how the SSTDR generated data are consistent with the aging of power MOSFETs, IGBTs and electrolytic capacitors.
Keywords :
RC circuits; ageing; aluminium; choppers (circuits); electrolytic capacitors; insulated gate bipolar transistors; power MOSFET; power convertors; semiconductor switches; time-domain reflectometry; Al; IGBT; RC circuit; aging process; aluminum electrolytic capacitors; chopper circuit; health state; normal circuit operation; power MOSFET; power converters; semiconductor switches; spread spectrum time domain reflectometry; vulnerable components; Aging; Capacitors; Insulated gate bipolar transistors; MOSFETs; Resistance; Stress; Temperature measurement;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342450