• DocumentCode
    1999862
  • Title

    Characterization of aging process in power converters using spread spectrum time domain reflectometry

  • Author

    Nasrin, M. Sultana ; Khan, Faisal H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA
  • fYear
    2012
  • fDate
    15-20 Sept. 2012
  • Firstpage
    2142
  • Lastpage
    2148
  • Abstract
    This paper aims to find a new technique to predict the state of health of power converters by characterizing the most vulnerable components in the converter without affecting the normal circuit operation. Spread spectrum time domain reflectometry (SSTDR) can detect most of the aged components inside the converter while the converter is operational. Semiconductor switches and electrolytic capacitors are the two most sensitive components in power converter circuits, and this paper demonstrated how SSTDR can be used to determine the degradation of these components. Multiple sets of test data have been generated while the SSTDR process is applied to the power MOSFETs, IGBTs connected in a chopper circuit and to the aluminum electrolytic capacitors connected in an RC circuit. Analysis is done on these obtained test data to show how the SSTDR generated data are consistent with the aging of power MOSFETs, IGBTs and electrolytic capacitors.
  • Keywords
    RC circuits; ageing; aluminium; choppers (circuits); electrolytic capacitors; insulated gate bipolar transistors; power MOSFET; power convertors; semiconductor switches; time-domain reflectometry; Al; IGBT; RC circuit; aging process; aluminum electrolytic capacitors; chopper circuit; health state; normal circuit operation; power MOSFET; power converters; semiconductor switches; spread spectrum time domain reflectometry; vulnerable components; Aging; Capacitors; Insulated gate bipolar transistors; MOSFETs; Resistance; Stress; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
  • Conference_Location
    Raleigh, NC
  • Print_ISBN
    978-1-4673-0802-1
  • Electronic_ISBN
    978-1-4673-0801-4
  • Type

    conf

  • DOI
    10.1109/ECCE.2012.6342450
  • Filename
    6342450