Title :
Corner field effect of the CMP oxide recess in shallow trench isolation technology for high density flash memories
Author :
Shum, D.P. ; Higman, J.M. ; Khazhinsky, M.G. ; Wu, K.Y. ; Soolin Kao ; Burnett, J.D. ; Swift, C.T.
Author_Institution :
Networking & Comput. Syst. Group, Motorola Inc., Austin, TX, USA
Abstract :
This paper presents CMP oxide recess with corner field effect in STI technology for high density, sub-0.35 /spl mu/m flash memories. Trench corners with different shape have shown to correlate with CMP recess. We have shown for the first time that non-uniform CMP polish across wafer leads to broad V/sub t/ distribution. Corner field effect at trench edge may play a role. Analytical model based on energy band structure is simulated.
Keywords :
EPROM; integrated memory circuits; isolation technology; polishing; 0.35 micron; CMP oxide recess; STI technology; analytical model; corner field effect; energy band structure; high density flash memory; shallow trench isolation; threshold voltage distribution; Analytical models; CMOS technology; Capacitors; Etching; Flash memory; Intelligent networks; Isolation technology; Planarization; Shape; Silicon;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650471
