Title :
Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion
Author :
Kamgar, A. ; Vuong, H.-H. ; Liu, C.T. ; Rafferty, C.S. ; Clemens, J.T.
Author_Institution :
Lucent Technols., Bell Labs., Murray Hill, NJ, USA
Abstract :
The trend of reverse short channel effect (RSCE) with nitrogen implant dose, gate oxide thickness, and threshold implant dose have been measured and simulated. Thinner gate oxide reduces RSCE. Implanting nitrogen also reduces RSCE, but exactly in proportion to gate oxide reduction; no extra effect of the large nitrogen dose was found. Furthermore, a saturation of TED-induced dopant pile-up with accumulating implant dose is shown.
Keywords :
MOSFET; diffusion; doping profiles; ion implantation; nitrogen; oxidation; semiconductor process modelling; MOSFET; N implant dose; Si:N-SiO/sub 2/; TED-induced dopant pile-up; gate oxide growth; gate oxide thickness; high energy implants; poly buffer LOCOS; reverse short channel effect; simulation; threshold implant dose; transient enhanced diffusion; Boron; Doping profiles; Implants; Impurities; MOSFET circuits; Nitrogen; Oxidation; Semiconductor process modeling; Thickness measurement; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650478
